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VOLUME 58 (1993) | ISSUE 5 | PAGE 368
Electron localization during nonlinear screening of the small-scale fluctuation potential of a GaAs-AlGaAs heterojunction
Experimental confirmation of a pronounced localization of the electron gas at minima of the small-scale potential well of a GaAs-AlGaAs heterojunction has been found. The energy scale (Δ—18 meV) and the length scale (200—400 A) of the fluctuations have been found. The value of Δ is essentially equal to the typical Coulomb energy of the interaction of ionized donors in the я-AlGaAs layer.