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VOLUME 58 (1993) | ISSUE 7 | PAGE 534
Effect of thermal filling of trapping centers on the stability of structural phases in semiconductors
The effect of a thermally induced change in the population of attachment levels (trapping centers) on phase transitions is analyzed. The thermal filling of trapping centers may give rise to a complex sequence of phase transitions. It may also give rise to a temperature interval in which there is an unstable state which is a boundary region between phases. This behavior is most likely to be observed in the course of incommensurate-commensurate phase transitions near the Lifshitz point.