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VOLUME 57 (1993) | ISSUE 12 | PAGE 783
Franz-Keldysh effect in the electric fields of macroscopic irregularities at a semiconductor surface
A phenomenological model for the generation of minority charge carriers at a semiconductor surface is constructed. This model successfully explains the exceedingly high rate of production of electron-hole pairs, which cannot be explained by other existing models. The generation kinetics predicted here agrees with experiments on silicon in the classical field-effect arrangement.