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VOLUME 57 (1993) | ISSUE 12 | PAGE 788
Excitons in GaAs/AlAs superlattices near a type-II-type-I transition
A type-II-type-I transition in GaAs/AlAs superlattices has been studied by optical magnetic-resonance detection and level-anticrossing spectroscopy. Three types of excitons, differing in exchange interactions and lifetimes, were detected near the transition. The exchange splitting of exciton levels in type-I superlattices was measured. The detection of a nonresonant effect of a microwave field on the luminescence of GaAs/AlAs superlattices made it possible to determine the complex structure of the emission line.