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VOLUME 61 (1995) | ISSUE 7 | PAGE 579
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures
The energy relaxation time of 2D electrons, ÔÅ, has been measured under quasiequilibrium conditions in AlGaAs-GaAs heterojunctions over the temperature range T= 1.5-20 K. At T>4 K, rf depends only weakly on the temperature, while at T<4 ë Ô~\ô) there is a dependence rj' — T. A linear dependence τ~ι(Τ) in the Bloch-Griineisen temperature region (Γ<5 ë) is unambiguous evidence that a piezoa-coustic mechanism of an electron-phonon interaction is predominant in the inelastic scattering of electrons. The values of rf in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scattering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical results. © 1995 American Institute of Physics.