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VOLUME 61 (1995) | ISSUE 7 | PAGE 609
Slow relaxation of an excited state of an arsenic donor impurity in germanium
There are long-lived excited impurity states in germanium, as in diamond and silicon. In the case of an arsenic donor impurity, a long-lived excited state is manifested in a slow (3X 10"5 s) relaxation of the impurity photoconductivity when a microwave bias voltage is applied. © 1995 American Institute of Physics.