Quasibreakdown in the impurity Hubbard band system of noncompensated silicon
Gurvich Yu. A. , Melnikov A. P., Shestakov L. N. , Gershenzon E. M.
It was found that in a crystalline silicon the impurity conductivity abruptly increases with electric field Ε at E>EC, where Ec is a certain threshold value of the field. This increase—"the quasibreakdown" (QB)—was observed only in materials with extremely low compensation: K<\0~3. The dependence σ(Ε) in the QB region is approximated well by the expression In σ~(l/E). The weak magnetic field can supress the QB completely. It is suggested that QB is a hopping conductivity through the localized states of the upper Hubbard band tail which is stimulated by an electric field. © 1995 American Institute of Physics.
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![](/ps/1208/article_18258_800_head.png "It was found that in a crystalline silicon the impurity conductivity abruptly increases with electric field <i>Ε </i>at <i>E>E<sub>C</sub></i>, where <i>E<sub>c</sub> </i>is a certain threshold value of the field. This increase—"the quasibreakdown" (QB)—was observed only in materials with extremely low compensation: <i>K<\0~<sup>3</sup>. </i>The dependence <i>σ(Ε) </i>in the QB region is approximated well by the expression In σ~(<i>l/E). </i>The weak magnetic field can supress the QB completely. It is suggested that QB is a hopping conductivity through the localized states of the upper Hubbard band tail which is stimulated by an electric field. © <i>1995 American Institute of Physics.</i>")