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VOLUME 61 (1995) | ISSUE 9 | PAGE 733
Energy spectrum of narrow-gap semiconductor heterostructures described by a two-band equation
Two effects which arise in narrow-gap heterostructures described by a two-band equation are discussed. The first effect ensures that there are no coincident quantum-well energies in the hole and electron wells in type-II heterostructures which are symmetric under the substitution Ec(z)= -Ev(-z), where Ec(z) [Ev(z)] is the energy position of the bottom (top) of the conduction (valence) band. The second effect is the existence of a localized state whose energy coincides with the inversion point in a semiconductor structure with mutually inverted bands. This state does not depend on the shape of the energy structure or the boundary conditions. © 1995 American Institute of Physics.