Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 61 (1995) | ISSUE 9 | PAGE 768
Nature and charge states of a Ga impurity in PbTe
The temperature dependence of the resistivity ρ and the magnetic susceptibility χ has been measured during low-intensity illumination of a compensated PbTe(0.3 at. % Ga) single crystal, which exhibits a persistent photoconductivity. The p(T) dependence is exponential at Γ^72 K, deviating toward smaller values at low temperatures. The magnetic susceptibility obeys a Curie-Weiss law over the temperature interval 4.2«Γ=£45 К with a cutoff temperature Θ = -5.8 К. There is a sharp increase in the paramagnetic component of χ in the temperature interval 45=еГ=£72 K, in the diamagnetic region. At higher temperatures, the diamagnetic susceptibility falls off monotonically. The temperature dependence χ(Τ) is interpreted in terms of a mixed valence of Ga in PbTe and the existence of an s1p2 paramagnetic state of this impurity. © 1995 American Institute of Physics.