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VOLUME 62 (1995) | ISSUE 4 | PAGE 324
Strong polarization of the photoluminescence of InxGa1-xP grown on (110) GaAs
Strong linear polarization of photoluminescence (PL) from I^Gat _XP (0.485<л:<0.55), grown by MOS-hydride epitaxy on (110) GaAs, has been observed. To explain the polarization of photoluminescence, a new type of ordering in InxGa!_^P was hypothesized. In the ordered phase the In and Ga atoms occupy cation sites not randomly but rather in pairwise alternating (110) planes. X-Ray crystallographic studies revealed superstructural reflections corresponding to_a (InP)2(GaP)2 bi-layer superlattice with a period of ~8 A in the [110] direction. This observation confirms our hypothesis. © 1995 American Institute of Physics.