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VOLUME 62 (1995) | ISSUE 5 | PAGE 397
Exciton localization by a potential well formed by a solid solution in the surface region of a semiconductor
New striking features were observed in low-temperature (7=2 —77 K) optical excitonic spectra of CdS crystals. These features are caused by the trapping of excitons in a potential well formed by the solid solution CdSj-vSe^x—O.Ol) in the surface region of a semiconductor.