Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 62 (1995) | ISSUE 6 | PAGE 500
Magnetic trapping of charge carriers in the quantum wells of an asymmetric two-well semiconductor structure
It was found that in a magnetic field applied parallel to the layers of a quantum-size structure a luminescence line associated with the second quantum-well subband of a two-well system is excited. This effect is due to the magnetic localization of charge carriers in quantum wells which is accompanied by a weakening of the tunneling coupling between the wells. The results for a structure with strong tunneling coupling between the wells are described satisfactorily by a simple semiquantitative model with parabolic wells. A nonmonotonic magnetic-field dependence of the intensities of the luminescence lines was observed for a sample with weakly coupled wells. © 1995 American Institute of Physics.