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VOLUME 62 (1995) | ISSUE 8 | PAGE 611
Quasithreshold character of the far-inrared absorption in GaSb/InAs/GaSb quantum wells
Quasithreshold growth of far-infrared absorption in a GaSb/InAs/GaSb semimetallic quantum well has been observed. This effect is attributed to the existence in the energy spectrum of such structures of a region of quasi-three-dimensional electronic states near the Fermi level. The proposed model is also confirmed by the strong temperature dependence of the absorption. © 1995 American Institute of Physics.