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VOLUME 62 (1995) | ISSUE 12 | PAGE 929
Negative magnetoresistance in a two-dimensional electronic system in the region of hopping conductivity
Negative magnetoresistance which is quadratic in the magnetic field was detected in a Si MIS structure in the hopping-conductivity regime. As the field increases, the magnetoresistance passes through a minimum and then rapidly increases exponentially. It was found that the position of the minimum H, is virtually temperature-independent in the range 1.4 К <T<4.2 K. The observed field dependence pxx(H) agrees with the theoretically predicted behavior of the magnetoresistance under conditions of electron tunneling in a continous potential. © 1995