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VOLUME 46 (1987) | ISSUE 1 | PAGE 28
Resonant photovoltaic effect in an inversion layer at the surface of a semiconductor
The resonant photovoltaic effect, which occurs at the silicon surface as a result of excitation of the optical transitions between the size-quantization levels in the inversion layer, has been detected. This effect is attributable to the absence of an inversion center in this system.