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VOLUME 46 (1987) | ISSUE 1 | PAGE 35
Manifestation of metastable localized hole states in the slow kinetics of the edge luminescence of n-GaAs
A study has been made of the effect of heat pulses on the microsecond-range kinetics of the (free hole)-(neutral donor) luminescence which has been observed in л-GaAs at T0 = 1.7 K. The results of this study show that this kinetics is governed by a slow, nonactivated replenishment of the concentration of free holes from localized metastable states with an energy below the top of the GaAs valence band.