Effect of charged-impurity potential on exciton formation in quantum wells
Kop'ev P. S. , Kochereshko V. P. , Ural'tsev I. N. , Yakovlev D. R.
Auxiliary illumination which causes a charge exchange of an impurity in the material of the barriers of quantum wells has been observed to cause an increase in the efficiency of radiative recombination in these wells. The effect is shown to result from an increase in the exciton formation probability in the well as the potential relief set up by deep impurities of the barriers is smoothed over.