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VOLUME 46 (1987) | ISSUE 7 | PAGE 275
Photodesorption of metal ions in a semiconductor-water system
The effect of a low-intensity laser beam on the desorption of metal ions from the surface of a semiconductor has been studied. The results reveal an increase in the desorption of potassium ions from a silicon surface during illumination by an argon laser at an intensity of 100 m W/cm2.