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VOLUME 46 (1987) | ISSUE 10 | PAGE 405
Temperature dependence of the lineshape of the 1 s→ 2p0 photothermal ionization of donors in GaAs
A change has been observed in the lineshape of the Is— 2p0 photoexcitation of donors in GaAs which results from a transition from a correlated to a totally random distribution of electrons at impurities as the temperature is raised. A comparison of the experimental results with the results of a numerical simulation reveals the compensation and concentration of the impurities in the ultrapure GaAs.