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VOLUME 46 (1987) | ISSUE 11 | PAGE 443
Crystallization of the Si-SiO2 superlattices stimulated by a uniaxial periodic potential
A new type of superlattice based on thin Si and Si02 layers has been obtained. 1 application of a uniaxial periodic potential and thermal annealing cause the superlattices to crystallize, forming a new hexagonal crystal structure.