Proof of the existence of optical anisotropy in the EL2 centers of gallium arsenide by the polarized-luminescence method
Oborina E. I. , Ostapenko S. S. , Shenkman M. K.
The optical anisotropy of the 0.635-eV and 0.68-eV photoluminescence centers of the EL2 series has been established by the polarized-luminescence method. Each band is shown to be related to two defects with different symmetries, one of which is unstable. A persistent relaxation of the induced polarization of the photo-luminescence accompanying the fatiguing process has been detected for the first time.