Self-compensation induced in semiconductors by centers with a negative correlation energy
Bagraev N. T. , Kolchanova N. M. , Mashkov V. A.
Self-compensation processes which depend on an external electric field have been observed during optical pumping of GaAs containing antisite defects of the type AsGa. A new model is proposed for an antisite defect on the basis of the concept of a negative correlation energy. This model incorporates two-electron capture, metastability, and self-compensation.