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VOLUME 45 (1987) | ISSUE 10 | PAGE 476
Metal-insulator transition in inversion channels of silicon MOS structures
The electrical conductivity of silicon inversion channels with a high carrier mobility has been studied over the temperature interval 0.5<7< 15 K. The results of the measurements agree with Mott's idea [N. F. Mott, Phil. Mag. 19, 835 (1969) ] of the existence of a limiting value amm ~e2/h, which divides 2D conductors into insulators and metals.