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VOLUME 45 (1987) | ISSUE 12 | PAGE 577
Single-parameter scaling and conductance of 2D systems at the silicon surface
The temperature dependence of the conductance of a 2D hole gas in field-eiFect silicon transistors is found to be determined solely by the conductance. This result is a compelling argument in support of the existence of a single-parameter scaling in systems with a strong spin-orbit coupling.