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VOLUME 54 (1991) | ISSUE 7 | PAGE 393
Kinetics of the radiative recombination of 2D electrons with photoexcited holes at a single GaAs/AIGaAs heterojunction with a monolayer of acceptors
The kinetics of the radiative recombination of 2D electrons with photoexcited holes, localized in a monolayer of acceptors at a given distance from the interface, has been studied at a single GaAs/AlGaAs heterojunction. The time scales for the recombination of the 2D electrons from the ground and excited quantum-well subbands have been determined for various distances between the 2D channel and the monolayer of acceptors.