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VOLUME 40 (1984) | ISSUE 6 | PAGE 231
Effect of illumination on the galvanomagnetic characteristics of a 2D electron gas in a strong magnetic field
Light with a photon energy ^ 1.9 eV strongly affects the galvanomagnetic characteristics of silicon metal-insulator-semiconductor structures under conditions corresponding to the quantum Hall effect. The light increases the density of 2D carriers by an amount ANS (to 9 Χ ΙΟ10 cm-2). The effect is linked with a decrease in the space charge density near the surface of the structure. The observed long-term relaxation of photoexcited carriers (lasting as long as 104 s) can be shortened (to 10 s) by illumination with infrared light.