Conductivity increase of a 2D electron gas with decreasing temperature in Si (100) metal-insulator-semiconductor structures
Dorozhkin S. I. , Dolgopolov V. T.
A linear temperature dependence has been found for the conductivity σ of a 2D electron gas on a Si (100) surface at liquid-helium temperatures (1.3 Κ<Γ<4.2 К): a(Ns, Τ) = a0(Ns) — aT. Under these particular experimental conditions the coefficient a depends only weakly on the electron density [Ns) in the inversion layer. At Ns zzlX 10u cm"2 the conductivity increases severalfold as the temperature is reduced from 4.2 to 1.3 K.
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![](/ps/1257/article_19010_800_head.png "A linear temperature dependence has been found for the conductivity <i>σ </i>of a <i>2D </i>electron gas on a Si (100) surface at liquid-helium temperatures (1.3 Κ<Γ<4.2 К): <i>a(N<sub>s</sub>, Τ) = a<sub>0</sub>(N<sub>s</sub>) — aT. </i>Under these particular experimental conditions the coefficient <i>a </i>depends only weakly on the electron density <i>[N<sub>s</sub>) </i>in the inversion layer. At <i>N<sub>s</sub> </i><i>zzlX </i>10<sup>u</sup> <i>cm"<sup>2</sup> </i>the conductivity increases severalfold as the temperature is reduced from 4.2 to 1.3 K.")