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VOLUME 40 (1984) | ISSUE 7 | PAGE 269
Effect of a structural change in the silicon surface on the diffusion of potassium and sodium on it
The diffusion of potassium and sodium on a silicon surface, cleaned by field evaporation and changed by high-temperature (T> 700 K) heating, was studied by the method of field-emission spectroscopy. After the surface was changed, the diffusion coefficient increased by more than three orders of magnitude.