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VOLUME 40 (1984) | ISSUE 10 | PAGE 413
Radiative recombination of 2D electrons with photoexcited holes in silicon metal-insulator-semiconductor structures
A radiative recombination of 2D electrons with photoexcited holes has been observed in silicon metal-insulator-semiconductor structures. The results of spectroscopic measurements agree with the results of simultaneous magnetotransport measurements and reveal the energy dependence of the state density of 2D electrons and their Fermi energy .