Resonance-hybridization version of the Mott transition
Kamilov I. K., Daunov M. I., Elizarov V. A., Magomedov A. B.
It is shown on the basis of a model material, p-CdSn As2 (Cu), that a superposition of localized impurity-band states on the band continuum causes a resonance-hybridization version of the Mott transition through the impurity band. In the course of this transition, the mobility of the impurity-band carriers is "pulled" toward the mobility of the band carriers.