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VOLUME 54 (1991) | ISSUE 11 | PAGE 639
Giant negative magnetoresistance accompanying a hopping conductivity in uncompensated silicon
A negative magnetoresistance has been observed under hopping-conductivity conditions in silicon with a dopant concentration N = 5Xl016-1017cm~3 and a degree of compensation^ = 10~^-3 Χ 10-2. This negative magnetoresistance reaches 100% at Η = 30 kOe. It is suggested that the effect stems from a structural change in the dopant band in a magnetic field