Observation of thermal double donors in the energy spectrum of new donors in silicon
Andreev B. A., Golubev V. G., Emtsev V. V., Kropotov G. I., Oganesyan G. A., Schmalz K.
Thermal double donors have been observed among the high-temperature (T% 600 °C) "new donors" in silicon by Fourier transform spectroscopy. The energy spectrum of these double donors is the same as that of low-temperature (T= 320-500 °C) thermal double donors, but there are differences in formation kinetics and in the stability of the atomic configuration. The results are evidence of a high thermal stability of double donor centers in silicon.
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![](/ps/1268/article_19185_800_head.png "Thermal double donors have been observed among the high-temperature <i>(T% </i>600 °C) "new donors" in silicon by Fourier transform spectroscopy. The energy spectrum of these double donors is the same as that of low-temperature <i>(T= </i>320-500 °C) thermal double donors, but there are differences in formation kinetics and in the stability of the atomic configuration. The results are evidence of a high thermal stability of double donor centers in silicon.")