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VOLUME 55 (1992) | ISSUE 2 | PAGE 146
Percolation metal-insulator transition in 2D electron gas of SI MOSFET under the ultra-quantum limit condition
The metal-insulator transition in 2D electron gas of Si MOSFET has been investigated. In strong magnetic fields the phase boundary in the H, Ns plane was found to be a straight line with the slope vc = 0.53 ± 0.01, which strongly suggests the percolation character of transition.