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VOLUME 55 (1992) | ISSUE 5 | PAGE 268
Relaxation time of the interband scattering of Ls holes in the alloy p-Bi0.88Sb0.12
The relaxation times have been determined for the interband and intraband scattering of carriers (rinterb/rintrab ~0.2) in the alloy/7-Bi0 85 Sb012. These results were found through an analysis of certain anomalies in the behavior of the thermoelectric power [cc22(EFL) ] and the resistivity [ (p22(EFL)]. These anomalies are caused by an interband scattering of carriers by the ground hole band Ls into a heavy hole band Σ upon a topological electronic transition. The analysis is also based on the behavior of \a22{EFL) | andp22(EFL) in the absence of this topological electronic transition in the alloy n-Bi0 88 Sb012, in which the La conduction band is the mirror image of the Ls valence band.