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VOLUME 55 (1992) | ISSUE 5 | PAGE 289
The Fermi level is not pinned at the p-GaAs(100) surface during adsorption of cesium and oxygen
It is possible to control the extent of band curvature and the rate of surface recombination during the deposition of cesium and oxygen on a />-GaAs( 100) surface at Τ = 300 К. This observation is evidence that the Fermi level is not pinned by defect states.