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VOLUME 39 (1984) | ISSUE 3 | PAGE 143
Fractional quantization of the Hall resistivity in silicon metal-insulatorsemiconductor structures
Anomalies have been observed in components of the resistivity tensor in silicon metal-insulator-semiconductor structures. These anomalies correspond to fractional values of the Landau-level filling factor, ν = 4/3 and ν = 2/3.