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VOLUME 56 (1992) | ISSUE 2 | PAGE 78
Proof of a dielectronic mechanism for the formation of Ba2+ ions in the IR region (ω=9395 cm-1)
The mechanism for the formation of Ba2+ ions during ionization of Ba atoms by light from a YAG laser has been studied. A beam of Ba atoms was exposed to the light from a dye laser, as well as the light from the YAG laser, in order to identify the Ba2+ formation mechanism. The light from the dye laser caused an additional excitation of the neutral atoms in the course of their ionization. The yield of Ba2+ ions was found to be much lower when the dye laser excited the Ba atoms than when the Ba atoms were not excited. This result indicates that the formation of Ba2+ ions at the frequency of the Y AG-laser beam occurs as the result of a dielectronic mechanism.