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VOLUME 56 (1992) | ISSUE 2 | PAGE 98
Photoexcitation of local vibrations in semiconductors
A new mechanism for the excitation of local vibrations of defects with a deep level is discussed. If the density of free carriers is high, and if the photoexcitation of the defects is intense, the energy of the absorbed light may be transferred to local vibrations as the result of a radiationless multiphonon capture of carriers by photoionized defects.