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VOLUME 56 (1992) | ISSUE 3 | PAGE 153
Weak ferroelectricity in layered A3B3C26 ferroelectric-semiconductor materials
A phase transition to a phase which has a weak ferroelectricity has been observed for the first time in layered TlInS2 and TlGaSe2 ferroelectric-semiconductor materials. The detected phase transition is assumed to be an isomorphic phase transition.