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VOLUME 56 (1992) | ISSUE 3 | PAGE 156
Solid-phase disordering of bulk Ge and Si samples under pressure
Transitions of the metallic Gell and Sill modifications upon reduction of pressure at low temperatures have been studied. Experiments have shown that, depending on the temperature, amorphous tetrahedral phases, in addition to the usual metastable Silll, GelH, and GelV modifications, can form in massive Ge and Si samples. Calorimetric studies of the crystalline and amorphous phases have been carried out at atmospheric pressure. Crystallization of bulk samples (characteristic size s 2 mm) of amorphous Ge and Si was observed at temperatures close to the standard crystallization temperatures of amorphous films: 700-730 К and 940-980 K, respectively.