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VOLUME 56 (1992) | ISSUE 3 | PAGE 160
Spin relaxation of photoexcited electrons and holes in a single GaAs/AlGaAs heterojunction
The spin relaxation of photoexcited electrons and holes in a single GaAs/AlGaAs heteroj unction has been determined in a direct experimental study of the kinetics of the recombination radiation in which the circular polarization was analyzed. The hole spin relaxation time in different magnetic fields has been determined. The upper limit of the time it takes to establish spin equilibrium in the electron subsystem has been determined.