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VOLUME 56 (1992) | ISSUE 5 | PAGE 257
Anisotropy of the electron g-factor in GaAs/AlGaAs quantum wells
An anisotropy of theg-factor of conduction electrons has been detected in single GaAs/Al0 3 Ga„ 7 As quantum wells on the basis of a magnetic depolarization of luminescence during optical orientation of the electrons. A ratio /g1 = 2.2 + 0.4 was measured in a quantum well 80 A wide, where gy and gx are the components of theg-factor along and across the principal axis of the structure. A bistability of the spin-coupled electron-nuclear spin system of the semiconductor has been detected. This bistability results from an anisotropy of the electron g-factor. It is manifested in a hysteresis on the curve of the magnetic depolarization of the luminescence.