Effect of domain structure on the energy spectrum of narrow-gap ferroelectric semiconductors
Idlis B. G., Usmanov M. Sh.
The spectrum of a narrow-gap ferroelectric semiconductor is analyzed. If this semiconductor contains a ferroelectric domain, states localized both at the walls of this domain and inside it split offfrom the bulk spectrum. These nondegenerate states have a dispersion, in contrast with the "heavy-fermion" states at an isolated domain wall.
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![](/ps/1285/article_19426_800_head.png "The spectrum of a narrow-gap ferroelectric semiconductor is analyzed. If this semiconductor contains a ferroelectric domain, states localized both at the walls of this domain and inside it split offfrom the bulk spectrum. These nondegenerate states have a dispersion, in contrast with the "heavy-fermion" states at an isolated domain wall.")