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VOLUME 39 (1984) | ISSUE 5 | PAGE 208
Effect of localized states near the metal-insulator transition on the conductivity and magnetoconductivity of strongly doped n -germanium
It is shown that 1) in the range of impurity concentrations 1.4 Nc < N < Шс, it is possible to determine from the results of measurements of the magneto-conductivity in Ge(As) the value of the critical index of the metal-insulator transition; 2) the Yosida-Toyozawa effect in doped semiconductors can appear only in a narrow range of concentrations Nc <N< IANC9 when, because of the disorder in the system, localized and delocalized states can exist near the Fermi level.