Thermally stimulated brightening of a crystal boundary in the exciton absorption region
Pevtsov A. B. , Permogorov S. A. , Sel'kin A. V.
As the temperature of a CdS crystal is raised from 2 to 30 K, the minimum value of the exciton reflection coefficient is observed to decrease. This effect stems from the temperature dependence of the dissipative exciton damping Γ near an interior surface of an exciton-free transition layer. At Τ S 50 К the Γ (Τ) dependence cannot be explained by an exciton-phonon interaction mechanism.