Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 56 (1992) | ISSUE 7 | PAGE 376
Anomalous galvanomagnetic properties of In-doped Pb1-xSnxTe at low temperatures
Quantum oscillations of the Hall coefficient have been observed at 77 К in the narrow-gap semiconductor Pb^^Sn^Tefln), and a sign-varying magnetoresis-tance has been observed at 4.2 K. These results are explained in terms of special properties of a surface layer of the bulk semiconductor.