Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 59 (1994) | ISSUE 2 | PAGE 123
Semiconductor-metal transition in amorphous gallium antimonide at high pressure
The mechanism for the pressure-induced semiconductor-metal transition has been studied in bulk samples of amorphous gallium antimonide. The test samples were synthesized by solid-phase amorphization of the high-pressure GaSb II crystalline modification. The transition of a-GaSb to the metallic state at Pzz 3.5-4.0 GPa is accompanied by a significant anomaly in the compressibility and by irreversible relaxation processes. It is concluded that the transition of α-GaSb to a metallic phase cannot be caused by a restructuring of the electron subsystem alone. It involves a change in the structure of the tetrahedral amorphous network and a transition of this network into a more compact state.