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VOLUME 59 (1994) | ISSUE 4 | PAGE 235
Resonant Raman scattering and redislocation effects in GaAs/AlGaAs
A redislocation of electronic excitations out of a barrier into quantum wells of a GaAs/AlGaAs quantum-well structure upon a narrowing of the barriers is predicted theoretically. This effect has also been seen experimentally, by the method of resonant Raman spectroscopy. The possibilities of resonant Raman spectroscopy for testing the localization of the electron wave function in quantum-well structures are demonstrated.