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VOLUME 39 (1984) | ISSUE 9 | PAGE 420
Fractional quantum Hall effect of a 2D electron system in a silicon MIS structure
Quantum features have been found in the magnetotransport properties of the 2D electron gas in a silicon MIS structure at # 8-11 Τ and T= 1.7 K. These features are found not only near integer values of the filling factor ν but also at fractional values: ν = 2/3, 4/3, 5/3, 7/3, 8/3, 6/5, and 7/5. These fractional features, which are caused by electron-electron interactions, suggest a possible ordering in the 2D electron system.