Properties of a 2D hole gas at a silicon surface in ultrastrong magnetic fields
Gusev G. M. , Kvon Z. D., Neizvestnyi I. G. , Ovsyuk V. N. , Cheremnykh P. A.
The properties of a 2D hole gas at a silicon surface have been studied in magnetic fields up to 21 Τ for the first time. A quantization of the Hall resistance of the 2D holes was achieved. This quantization was found to be independent of the filling factor of the light-hole subband. The Shubnikov oscillations are classified correctly.