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VOLUME 39 (1984) | ISSUE 9 | PAGE 446
Properties of a 2D hole gas at a silicon surface in ultrastrong magnetic fields
The properties of a 2D hole gas at a silicon surface have been studied in magnetic fields up to 21 Τ for the first time. A quantization of the Hall resistance of the 2D holes was achieved. This quantization was found to be independent of the filling factor of the light-hole subband. The Shubnikov oscillations are classified correctly.